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Philips Semiconductors
TOPFET dual high side switch
THERMAL CHARACTERISTIC
Product specification
BUK218-50DY
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Thermal resistance 1
R th j-mb
Junction to mounting base
per channel
both channels
-
-
2.4
1.2
3
1.5
K/W
K/W
STATIC CHARACTERISTICS
Limits are at -40?C ≤ T mb ≤ 150?C and typicals at T mb = 25 ?C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Clamping voltages
V BG
V BL
V GL
Battery to ground
Battery to load per channel
Ground to load 2
I G = 1 mA
I L = I G = 1 mA
I L = 10 mA
I L = 10 A; t p = 300 μ s
45
50
18
20
55
55
23
25
65
65
28
30
V
V
V
V
Supply voltage
battery to ground
Operating range
V BG
3
-
5.5
-
35
V
Currents
9 V ≤ V BG ≤ 35 V
I B
I L
I G
Total quiescent current 4
Off-state load current per
channel
Operating current
V LG = 0 V
V BL = V BG
one channel on
both channels on
T mb = 25?C
T mb = 25?C
-
-
-
-
-
-
-
0.1
-
0.1
1.8
3.6
20
1
10
1
3
6
μ A
μ A
μ A
μ A
mA
mA
Nominal load current
I L
R G
5
Effective internal ground
V BL = 0.5 V; T mb = 85?C
I G = -200 mA; t p = 300 μ s
8
40
-
75
-
100
A
?
resistance 6
Resistances per channel
V BG
I L
t p7
T j
R ON
On-state resistance
9 to 35 V
10 A
300 μ s
25?C
-
30
40
m ?
150?C
-
60
80
m ?
R ON
On-state resistance
5.5 V
5A
300 μ s 25?C
-
50
60
m ?
150?C
-
100
120
m ?
1 Of the output Power MOS transistors.
2 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltage
is clamped by the device.
3 On-state resistance is increased if the supply voltage is less than 7 V.
4 This is the continuous current drawn from the battery when both inputs are low and includes leakage currents to the loads.
5 Per channel but with both channels conducting. Defined as in ISO 10483-1.
6 Equivalent of the parallel connected resistors for both channels.
7 The supply and input voltage for the R ON tests are continuous. The specified pulse duration t p refers only to the applied load current.
May 2001
3
Rev 1.400
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